This is a semiconductor diode. Theory:-A Semiconductor diode is prepared by joining P and N sections of a semi conducting … Zener Diode (D1N750) 4. Connect the leads from the junction to the FWD VOLT output jacks, … Materials Required. Forward and reverse characteristics at room temperature: Turn on the temperature control unit and set the temperature switch to \(25^oC\).The power supply for the p-n junction has two independent outputs and two independent voltage control knobs for forward and reverse operation respectively. PN rectifying diode (D1N4002) 2. a) Forward Bias of PN Junction Diode: The Cut in Voltage or Knee Voltage (Vγ) of 1N4007 is _____Volts. In the image above, the arrow indicates the direction of current when the diode is under forward bias. Apparatus:-Experimental kit and patch cords. Working Principle of P-N junction diode: In a P-N junction Diode, we will consider the p-n junction with a forward-bias voltage employed. This is the symbolical representation of a semiconductor diode:. Question: EXPERIMENT NO 2 PN JUNCTION DIODE CHARACTERISTICS 2.1 AIM To Plot The V-I Characteristics Of A PN Junction Diode In Both Forward And Reverse Directions. The Static Forward resistance of 1N4007 is _____ . Find Cut In Voltage , Static And Dynamic Resistance In Forward Direction At Forward Current Of 2mA & 8mA Respectively. To draw the I-V characteristic curve of a p-n junction in forward bias and reverse bias. Simulator Procedure (as performed through the Online Labs) Select the characteristics of diode from the drop down list. A PN junction is said to be forward-biased when the p-type region of a junction is connected to the positive terminal of a voltage source and the n-type region is connected to the voltage source’s negative terminal.. Schottky Diode (MBD101) 3. The VI Characteristics of the PN Junction Diode in Forward Bias. Select the diode … The Dynamic Forward resistance of 1N4007 is _____ . Pre-Lab: Acquire the necessary parts to perform the experiment. EXPERIMENT: DIODE & ZENER DIODE Objective:- To study the forward and reverse bias characteristics of diode and zener diode. The potential barrier of this p-n junction is reduced when a forward-bias voltage is applied to it. The graph shows the reverse V-I characteristics of the given p-n junction diode. It is also important to note here that the equilibrium barrier potential can be altered. List of Parts: 1. When a diode is connected in a Forward Bias condition, a negative voltage is applied to the N-type material and a positive voltage is applied to the P-type material. Objective: To study the forward and reverse bias characteristics of various types of diodes including ordinary p-n junction diodes, Zener diodes, light-emitting diodes (LED), Schottky diodes, and germanium diodes. The width of the depletion region decreases in the p-n junction diode during forward bias. Reverse bias characteristics. 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